Structure for radio-frequency applications
USRE49365E1 · kind E1 · reissue
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Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jul 2, 2040 |
Classification
- Technology area (CPC —)General
Abstract
A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.