Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same

USRE49620E1 · kind E1 · reissue

Assignee

• FUDAN UNIVERSITY · CN

Inventors

• Anquan Jiang · Shanghai, CN
• Wenping Geng · Shanghai, CN

Key dates

• Filing date: Jun 15, 2020
• Grant date: Aug 22, 2023
• Expiry date: Jun 15, 2040

Classification

• Technology area (CPC —): General

Abstract

Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.