Reusable nitride wafer, method of making, and use thereof

USRE49677E1 · kind E1 · reissue

Assignee

• SLT Technologies, Inc. · US

Inventors

• Mark P. D'Evelyn · Fremont, US
• Michael R. Krames · Los Altos, US

Key dates

• Filing date: Sep 4, 2020
• Grant date: Oct 3, 2023
• Expiry date: Sep 4, 2040

Classification

• Technology area (CPC —): General

Abstract

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.