Angstron Systems, Inc.
3Patents
0Active
3Granted
29Portfolio score
Filing activity: Mar 19, 2001 → May 3, 2002
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6428859B1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 686 | Expired |
| US6630201B2 | Adsorption process for atomic layer deposition | Electricity | 240 | Expired |
| US6569501B2 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 171 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.