Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6428859B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2001 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.