Finwave Semiconductor, Inc.
3Patents
3Active
3Granted
45Portfolio score
Filing activity: Dec 2, 2020 → Jun 17, 2021
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11695052B2 | III-Nitride transistor with a cap layer for RF operation | Electricity | 0 | Active |
| US12080807B2 | III-nitride diode with a modified access region | Electricity | 0 | Active |
| US11876130B2 | III-nitride transistor with a modified drain access region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.