III-nitride diode with a modified access region

US12080807B2 · kind B2 · utility

Assignee

• Finwave Semiconductor, Inc. · US

Inventors

• Dongfei Pei · Newton, US
• Bin Lu · Pittsburgh, US

Key dates

• Filing date: Jun 17, 2021
• Grant date: Sep 3, 2024
• Expiry date: May 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

This disclosure describes the structure and technology to modify the free electron density between the anode electrode and cathode electrode of III-nitride semiconductor diodes. Electron density reduction regions (EDR regions) are disposed between the anode and cathode electrodes of the diode structure. In certain embodiments, the EDR regions are created using trenches. In other embodiments, the EDR regions are created by implanting the regions with a species that reduces the free electrons in the channel layer. In another embodiment, the EDR regions are created by forming a cap layer over the barrier layer, wherein the cap layer reduces the free electrons in the channel beneath the cap layer. In another embodiment, a cap layer may be formed in the EDR regions, and doped regions may be created outside of the EDR regions, wherein the impurities act as electron donors.