Beryllium doped GaN-based light emitting diode and method
US11469348B1 · kind B1 · utility
1Cited by
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32Claims
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Key dates
| Filing date | Mar 9, 2020 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | May 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
Abstract
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.