Andy Chuang
10Patents
6h-index
9Co-inventors
59Inventor score
Filing activity: May 9, 1996 → Feb 17, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6093609A | Method for forming semiconductor device with common gate, source and well | Electricity | 33 | Expired |
| US5814553A | Method of fabricating self-align contact window with silicon nitride side wall | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6008080A | Method of making a low power SRAM | Electricity | 21 | Expired |
| US6320254A | Plug structure | Electricity | 16 | Expired |
| US5962342A | Adjustable method for eliminating trench top corners | Electricity | 10 | Expired |
| US5936279A | Method of fabricating self-align contact window with silicon nitride side wall | Electricity | 6 | Expired |
| US6054362A | Method of patterning dummy layer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6153479A | Method of fabricating shallow trench isolation structures | Electricity | 4 | Expired |
| US6180515A | Method of fabricating self-align contact window with silicon nitride side wall | Electricity | 2 | Expired |
| US11328900B2 | Plasma ignition circuit | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.