Method of fabricating self-align contact window with silicon nitride side wall
US6180515A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate oxide layer, a polysilicon layer are patterned on a substrate. Then, a thermal oxidation is carried out to form the first silicon dioxide layer on the surface of the polysilicon layer. Then, a first silicon nitride layer is patterned on the first silicon dioxide layer, over the top of the polysilicon layer. Then, a second silicon nitride layer is formed on the first silicon dioxide layer and the first silicon nitride layer. Next, a second silicon dioxide layer is formed on the second silicon nitride layer. Then, an etching technique is used to form the side-wall spacers. The side-wall spacers composed of silicon nitride layer and silicon dioxide layer. A dielectric layer is formed on the cap layer, side-wall spacers and silicon dioxide layer. An etch with high selectivity is used to etch the dielectric layer to create a contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.