Armelle Even
2Patents
1h-index
6Co-inventors
30Inventor score
Filing activity: Apr 25, 2017 → Jul 9, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10629773B2 | Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone | Electricity | 1 | Active |
| US11162188B2 | Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.