Light-emitting diode comprising at least one wider bandgap intermediate layer placed in at least one barrier layer of the light-emitting zone

US10629773B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Armelle Even · Regensburg, DE
• Miryam Elouneg-Jamroz · Grenoble, FR
• Ivan-Christophe Robin · Grenoble, FR

Key dates

• Filing date: Apr 25, 2017
• Grant date: Apr 21, 2020
• Expiry date: Apr 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816

Abstract

Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InXGa1-XN emitting layer able to form a quantum well, and two InYGa1-YN, where 0<Y<X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InWGa1-WN, where 0<W<Y, and the first layer includes InVGa1-VN, where V>W>0.