Patent · US Active

Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene

US11162188B2 · kind B2 · utility

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10Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Timotee Journot · Gières, FR
Bérangère Hyot · Eybens, FR
Armelle Even · Regensburg, DE
Amélie Dussaigne · Bizonnes, FR
Bruno Daudin · Grenoble, FR

Key dates

Filing date	Jul 9, 2018
Grant date	Nov 2, 2021
Priority date	—
Expiry date	Jul 9, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/403
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (Ttt) no lower than 1050° C. and to a stream of ammonia.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.