Basab Banerjee
3Patents
3h-index
12Co-inventors
47Inventor score
Filing activity: Mar 5, 2003 → Nov 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6995437B1 | Semiconductor device with core and periphery regions | Electricity | 42 | Expired |
| US6780708B1 | METHOD OF FORMING CORE AND PERIPHERY GATES INCLUDING TWO CRITICAL MASKING STEPS TO FORM A HARD MASK IN A CORE REGION THAT INCLUDES A CRITICAL DIMENSION LESS THAN ACHIEVABLE AT A RESOLUTION LIMIT OF LITHOGRAPHY | Electricity | 30 | Expired |
| US9419101B1 | Multi-layer spacer used in finFET | Electricity | 12 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.