Bean-Jun Jin
2Patents
1h-index
4Co-inventors
30Inventor score
Filing activity: May 19, 2003 → Nov 4, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6858529B2 | Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus | Electricity | 4 | Expired |
| US7176533B2 | Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.