Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
US6858529B2 · kind B2 · utility
4Cited by
8References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | May 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.