Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
US7176533B2 · kind B2 · utility
1Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Nov 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.