Beihan Wang
3Patents
0h-index
4Co-inventors
24Inventor score
Filing activity: Jan 10, 2020 → Nov 22, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11195853B2 | Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same | Electricity | 0 | Active |
| US11792980B2 | Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same | Electricity | 0 | Active |
| US11411014B2 | Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.