Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
US11411014B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 10, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Jul 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack on the substrate; and a source contact structure extending vertically through the memory stack. The source contact structure includes a first source contact portion in the substrate and having a conductive material different from the substrate. The source contact structure also includes a second source contact portion above, in contact with, and conductively connected to the first source contact portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.