Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
US11792980B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 22, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Nov 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.