Ben C. Hui
2Patents
2h-index
7Co-inventors
33Inventor score
Filing activity: Mar 23, 1990 → Jun 2, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5603988A | Method for depositing a titanium or tantalum nitride or nitride silicide | Chemistry; Metallurgy | 7 | Expired |
| US5120676A | Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.