Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping
US5120676A · kind A · utility
2Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1990 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Mar 23, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/98
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.