Inventor · Fullerton, CA, US

Ben Heying

2Patents
2h-index
5Co-inventors
30Inventor score

Filing activity: Dec 20, 2007 → Mar 25, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US7897446B2 Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer Electricity 7 Active
US7750370B2 High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.