Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer

US7897446B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Ioulia Smorchkova · Lakewood, US
• Robert Coffie · Camarillo, US
• Ben Heying · Fullerton, US
• Carol Namba · Walnut, US
• Po-Hsin Liu · Anaheim, US
• Boris Hikin · Chino, US

Key dates

• Filing date: Mar 25, 2010
• Grant date: Mar 1, 2011
• Expiry date: Mar 25, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.