Benjamin G. Moser
8Patents
2h-index
26Co-inventors
47Inventor score
Filing activity: Dec 7, 2004 → Dec 22, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9685334B1 | Methods of forming semiconductor fin with carbon dopant for diffusion control | Electricity | 5 | Active |
| US9875939B1 | Methods of forming uniform and pitch independent fin recess | Electricity | 4 | Active |
| US9583397B1 | Source/drain terminal contact and method of forming same | Electricity | 1 | Active |
| US7253072B2 | Implant optimization scheme | Electricity | 1 | Expired |
| US7696021B2 | Semiconductor device manufactured using a non-contact implant metrology | Electricity | 1 | Active |
| US9748235B2 | Gate stack for integrated circuit structure and method of forming same | Electricity | 0 | Active |
| US10263065B2 | Metal resistor forming method using ion implantation | Electricity | 0 | Active |
| US10020260B1 | Corrosion and/or etch protection layer for contacts and interconnect metallization integration | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.