Semiconductor device manufactured using a non-contact implant metrology
US7696021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Apr 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including calibrating an ion implant process. The calibration includes forming a dielectric layer over a calibration substrate. A dopant is implanted into the dielectric layer. Charge is deposited on a surface of the dielectric layer, and voltage on the surface is measured. An electrical characteristic of the dielectric layer is determined, and a doping level of the dielectric layer is determined from the electrical characteristic. The electrical characteristic is associated with an operating set-point of the ion implant process. The calibrated ion implant process is used to implant the dopant into a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.