Source/drain terminal contact and method of forming same
US9583397B1 · kind B1 · utility
1Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2016 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | May 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.