Byung-Do Yang
5Patents
1h-index
20Co-inventors
51Inventor score
Filing activity: Dec 18, 2001 → Nov 18, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7920413B2 | Apparatus and method for writing data to phase-change memory by using power calculation and data inversion | Physics | 3 | Active |
| US12237331B2 | CMOS logic element including oxide semiconductor | Electricity | 0 | Active |
| US6615398B2 | Method for dividing ROM and DDFS using the same method | Physics | 0 | Expired |
| US11895817B2 | SRAM device including oxide semiconductor | Emerging Cross-Sectional Technologies | 0 | Active |
| US11671101B2 | Memory-type camouflaged logic gate using transistors with different threshold voltages | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.