Inventor · Baoshan, TW

Chi-San Wei

3Patents
2h-index
3Co-inventors
30Inventor score

Filing activity: Jul 3, 2007 → Oct 22, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US8236642B2 Fully isolated high-voltage MOS device Electricity 8 Active
US7843002B2 Fully isolated high-voltage MOS device Electricity 6 Active
US7781834B2 Robust ESD LDMOS device Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.