David Fuard
2Patents
2h-index
5Co-inventors
30Inventor score
Filing activity: Feb 16, 2000 → Sep 8, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6326302A | Process for the anisotropic etching of an organic dielectric polymer material by a plasma gas and application in microelectronics | Electricity | 8 | Expired |
| US6818488B2 | Process for making a gate for a short channel CMOS transistor structure | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.