Process for the anisotropic etching of an organic dielectric polymer material by a plasma gas and application in microelectronics
US6326302A · kind A · utility
8Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2000 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Feb 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the anisotropic etching of a dielectric organic polymer material using a plasma is provided. The gas phase of the plasma may include a gas mixture of O.sub.2 /NH.sub.3, O.sub.2 /H.sub.2 O, O.sub.2 /CH.sub.4 or O.sub.2 /H.sub.2. The oxygen concentration of the gas mixture may be less than 40% by volume. The process may include the fabrication of metal interconnects in a damascene-type structure of an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.