Delphine Aime
2Patents
1h-index
1Co-inventors
24Inventor score
Filing activity: Jan 10, 2006 → Nov 2, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7638427B2 | MOS transistor with fully silicided gate | Electricity | 7 | Active |
| US7947583B2 | Forming of silicide areas in a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.