Dongil Bae
6Patents
1h-index
13Co-inventors
44Inventor score
Filing activity: Aug 26, 2011 → Apr 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8679910B2 | Methods of fabricating devices including source/drain region with abrupt junction profile | Electricity | 17 | Active |
| US11171133B2 | Semiconductor device | Electricity | 1 | Active |
| US11699703B2 | Semiconductor device | Electricity | 0 | Active |
| US11302815B2 | Semiconductor device including active region and gate structure | Electricity | 0 | Active |
| US11990549B2 | Semiconductor device including active region and gate structure | Electricity | 0 | Active |
| US12402406B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.