Eric Aujol
2Patents
1h-index
4Co-inventors
33Inventor score
Filing activity: Jun 29, 2001 → Dec 8, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6632725B2 | Process for producing an epitaxial layer of gallium nitride by the HVPE method | Chemistry; Metallurgy | 31 | Expired |
| US8557042B2 | Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.