Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
US8557042B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 8, 2006 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Apr 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.