Process for producing an epitaxial layer of gallium nitride by the HVPE method
US6632725B2 · kind B2 · utility
31Cited by
4References
22Claims
0Family size
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Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.