Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device
US10847713B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | May 3, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | May 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.