Feng-Chien Tsai
9Patents
1h-index
18Co-inventors
40Inventor score
Filing activity: Jul 29, 2015 → Jun 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11111602B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Electricity | 1 | Active |
| US10988859B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Electricity | 0 | Active |
| US12202017B2 | Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatus | Chemistry; Metallurgy | 0 | Active |
| US12398487B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Chemistry; Metallurgy | 0 | Active |
| US12428750B2 | Ingot puller apparatus having silicon feed tubes with kick plates | Chemistry; Metallurgy | 0 | Active |
| US11753741B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Electricity | 0 | Active |
| US12291795B2 | Single crystal growth susceptor assembly with sacrifice ring | Emerging Cross-Sectional Technologies | 0 | Active |
| US12227874B2 | Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy | Physics | 0 | Active |
| US11959189B2 | Process for preparing ingot having reduced distortion at late body length | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.