Patent · US Active

Process for preparing ingot having reduced distortion at late body length

US11959189B2 · kind B2 · utility

0Cited by
18References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 3, 2020
Grant dateApr 16, 2024
Priority date—
Expiry dateSep 4, 2040

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B30/04
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.