Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy
US12227874B2 · kind B2 · utility
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Key dates
| Filing date | Jun 7, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jun 3, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8461
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.
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