N-CO-doped semiconductor substrate
US11990335B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Dec 18, 2019 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Oct 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.