Gary L. Langdeau
2Patents
1h-index
5Co-inventors
30Inventor score
Filing activity: Oct 31, 1995 → May 17, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5849629A | Method of forming a low stress polycide conductors on a semiconductor chip | Electricity | 4 | Expired |
| US6255200A | Polysilicon structure and process for improving CMOS device performance | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.