Gerald Dallmann
3Patents
2h-index
5Co-inventors
30Inventor score
Filing activity: Sep 29, 2010 → Oct 23, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8872341B2 | Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same | Electricity | 2 | Active |
| US8580687B2 | Semiconductor structure and method for making same | Electricity | 2 | Active |
| US9230885B2 | Semiconductor structure and method for making same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.