Patent · US Active

Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same

US8872341B2 · kind B2 · utility

2Cited by

9References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerald Dallmann · Dresden, DE
Heike Rosslau · Rohrbach, DE
Norbert Urbansky · Dresden, DE
Scott Wallace · Stillwater, US

Key dates

Filing date	Sep 29, 2010
Grant date	Oct 28, 2014
Priority date	—
Expiry date	May 12, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.