Semiconductor structure and method for making same

US8580687B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Dallmann · Dresden, DE
• Dirk Meinhold · Dresden, DE
• Alfred Vater · Dresden, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Nov 12, 2013
• Expiry date: Sep 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.