Heather McFavilen
4Patents
2h-index
4Co-inventors
30Inventor score
Filing activity: Mar 14, 2014 → Apr 28, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9246057B2 | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures | Electricity | 3 | Active |
| US9343626B2 | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures | Electricity | 2 | Active |
| US9634182B2 | Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices | Electricity | 0 | Active |
| US9978905B2 | Semiconductor structures having active regions comprising InGaN and methods of forming such semiconductor structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.