Semiconductor structures having active regions comprising InGaN and methods of forming such semiconductor structures
US9978905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1−wN, and at least one barrier layer comprising InbGa1−bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1−wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1−bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light-emitting device, such as an LED. Luminary devices include such LEDs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.