Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

US9246057B2 · kind B2 · utility

Assignee

• SOITEC · FR

Inventors

• Jean-Philippe Debray · Mesa, US
• Chantal Arena · Mesa, US
• Heather McFavilen · Tempe, US
• Ding Ding · Nanhu, CN
• Li-Da Huang · Tempe, US

Key dates

• Filing date: Mar 14, 2014
• Grant date: Jan 26, 2016
• Expiry date: Mar 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/817

Abstract

Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.