Hideaki Taniguchi
29Patents
14h-index
34Co-inventors
81Inventor score
Filing activity: Apr 29, 1987 → May 27, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5132820A | TFT active matrix liquid crystal display devices | Physics | 132 | Expired |
| US5187604A | Multi-layer external terminals of liquid crystal displays with thin-film transistors | Physics | 108 | Expired |
| US5285301A | Liquid crystal display device having peripheral dummy lines | Physics | 96 | Expired |
| US5177577A | Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film | Physics | 79 | Expired |
| US5331447A | TFT active matrix liquid crystal display devices with plural TFTs in parallel per pixel | Physics | 45 | Expired |
| US5532850A | TFT active matrix liquid crystal display with gate lines having two layers, the gate electrode connected to the wider layer only | Physics | 44 | Expired |
| US5528396A | TFT active matrix liquid crystal display devices with a holding capacitance between the pixel electrode and a scanning signal line | Physics | 40 | Expired |
| US5708484A | TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes | Physics | 39 | Expired |
| US5671027A | LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator | Physics | 32 | Expired |
| US5402254A | Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon | Physics | 32 | Expired |
| US5610738A | Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line | Physics | 30 | Expired |
| US5838399A | TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level as gate electrodes. | Physics | 27 | Expired |
| US6839098B2 | TFT active matrix liquid crystal display devices | Physics | 15 | Expired |
| US6384879B1 | Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor | Physics | 15 | Expired |
| US7196762B2 | TFT active matrix liquid crystal display devices | Physics | 13 | Expired |
| US6992744B2 | TFT active matrix liquid crystal display devices | Physics | 13 | Expired |
| US6184963A | TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines | Physics | 11 | Expired |
| US7450210B2 | TFT active matrix liquid crystal display devices | Physics | 9 | Active |
| US4804609A | Developing agent for electrophotography with silica and magnetite additives | Physics | 8 | Expired |
| US4796049A | Heat roller for electrophotographic copying machine | Physics | 5 | Expired |
| US7743883B2 | Noise eliminator for fuel cell | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5773175A | Photosensitive body for electrophotographical use and manufacturing method thereof | Physics | 3 | Expired |
| US6033815A | Photosensitive body for electrophotographical use and manufacturing method thereof | Physics | 2 | Expired |
| US9266466B2 | Stop lamp lighting control device for electric vehicle | Electricity | 2 | Active |
| US9403446B2 | Driving-force controller for electric vehicle | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.