LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator
US5671027A · kind A · utility
32Cited by
39References
70Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Aug 1, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13624
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.